Unknown Manufacturer 2N5644
NPN SILICON RF POWER TRANSISTOR
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Oissipation@Tc=25oC Derate above 25°C Operating and Storage Junction Temperature Range Symbol Vceo VCB Ve8 I~ Po TJ,T,tg Value 18 36 4.0 0.25 3.5 0.02 -65 to +200 Unit Vde Vde Vde Ade Watts W/oe °c 'ELECTRICAL CHARACTERISTICS
(Te =250 e unless otherwise noted) Characteristic I Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note') IIc=50