Datasheet Summary
2NS644 (SILICON)
NPN SILICON RF POWER TRANSISTOR
... designed for 12.5 Volt, UHF large signal amplifier applications reo quired in industrial and consumerFMequipmentoperating to520 MHz.
- Low lead inductance stripline package for ease of design and in- creased broadband capability
- Balanced Emitter Construction to protect against device damage due to load mismatch
- Specified 12.5 Volt, 470 MHz Characteristics Output Power = 1.0 Watt Minimum Gain = 7.0 dB Efficiency = 60%
'MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Oissipation@Tc=25oC
Derate above 25°C Operating and Storage Junction
Temperature...