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2NS644 (SILICON)
NPN SILICON RF POWER TRANSISTOR
... designed for 12.5 Volt, UHF large signal amplifier applications reo quired in industrial and consumerFMequipmentoperating to520 MHz.
• Low lead inductance stripline package for ease of design and in· creased broadband capability
• Balanced Emitter Construction to protect against device damage due to load mismatch
• Specified 12.5 Volt, 470 MHz Characteristics Output Power = 1.0 Watt Minimum Gain = 7.0 dB Efficiency = 60%
'MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Oissipation@Tc=25oC
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol Vceo VCB Ve8
I~
Po
TJ,T,tg
Value 18 36 4.0
0.25 3.5 0.
2N5644 Datasheet
