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56452N (SILICON)
NPN SILICON RF POWER TRANSISTOR
· .. designed for 12.5 Volt, UHF large signal amplifier applications required in industrial and consumer FM equipment operating to520 MHz.
• Low lead inductance stripline package for ease of design and increased broadband capability
• Balanced Emitter Construction to protect against device damage due to load mismatch
• Specified 12.5 Volt, 470 MHz CharacteristicsOutput Power: 4.0 Watt Minimum Gain: 6.0 dB Efficiency: 60%
"MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage
Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation@Tc-25DC
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
VCEO Vea VEa
IC Po
TJ,Tstg
Value
18
36
'.0 1.0 12 0.