Datasheet Details
| Part number | 2N5630 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 287.66 KB |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Datasheet | 2N5630_CentralSemiconductorCorp.pdf |
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Overview: 2N5629 2N5630 NPN 2N6029 2N6030 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i .
| Part number | 2N5630 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 287.66 KB |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Datasheet | 2N5630_CentralSemiconductorCorp.pdf |
|
|
|
: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications.
MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N5629 2N6029 100 2N5630 2N6030 120 100 120 7.0 16 20 5.0 200 -65 to +200 0.875 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEX VCE=Rated VCEO, VEB=1.5V ICEX VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=½Rated VCEO IEBO VEB=7.0V
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5630 | Bipolar NPN Device | Seme LAB |
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2N5630 | Power Transistor | Motorola |
| Part Number | Description |
|---|---|
| 2N5629 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N5022 | PNP SILICON TRANSISTOR |
| 2N5023 | PNP SILICON TRANSISTOR |
| 2N5058 | NPN SILICON TRANSISTOR |
| 2N5059 | NPN SILICON TRANSISTOR |
| 2N5183 | Small Signal Transistors |
| 2N5190 | NPN SILICON POWER TRANSISTOR |
| 2N5191 | NPN SILICON POWER TRANSISTOR |
| 2N5192 | NPN SILICON POWER TRANSISTOR |
| 2N5294 | NPN SILICON TRANSISTOR |