APT20GN60BDQ1 Datasheet - Microsemi Corporation

APT20GN60BDQ1, High Speed PT IGBT

TYPICAL PERFORMANCE CURVES APT20GN60BDQ1 APT20GN60BD_SDQ1(G) APT20GN60SDQ1 APT20GN60BDQ1(G) APT20GN60SDQ1(G) 600V *G Denotes RoHS Compliant, Pb F.

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Datasheet Details

Part number:

APT20GN60BDQ1

Manufacturer:

Microsemi ↗ Corporation

File Size:

178.37 KB

Description:

High Speed PT IGBT

Applications

* that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefﬁcient. Low gate charge simpliﬁes gate drive design and minimizes losses. G (B) TO -2 47 D3PAK (S) C G E
* 600V Field Stop

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APT20GN60BDQ1 High Speed IGBT Microsemi Corporation

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