APT30GS60BRDL Datasheet - Microsemi Corporation

APT30GS60BRDL Resonant Mode Combi IGBT

APT30GS60BRDL(G) www.DataSheet4U.com 600V, 30A, V CE(ON) = 2.8V Typical Resonant Mode Combi IGBT® The Thunderbolt HS™ IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signiﬁcantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution comb.

APT30GS60BRDL Features

* Fast Switching with low EMI

* Very Low EOFF for Maximum Efﬁciency

* Short circuit rated

* Low Gate Charge

* RoHS Compliant

* Tight parameter distribution

* Easy paralleling

* Low Forward Diode Voltage (VF)

* Ultrasoft Recovery

APT30GS60BRDL_MicrosemiCorporation.pdf