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APT30GS60BRDLG, APT30GS60BRDL Datasheet - Microsemi Corporation

APT30GS60BRDLG Resonant Mode Combi IGBT

APT30GS60BRDL(G) www.DataSheet4U.com 600V, 30A, V CE(ON) = 2.8V Typical Resonant Mode Combi IGBT® The Thunderbolt HS™ IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution comb.

APT30GS60BRDLG Features

* Fast Switching with low EMI

* Very Low EOFF for Maximum Efficiency

* Short circuit rated

* Low Gate Charge

* RoHS Compliant

* Tight parameter distribution

* Easy paralleling

* Low Forward Diode Voltage (VF)

* Ultrasoft Recovery

APT30GS60BRDL_MicrosemiCorporation.pdf

This datasheet PDF includes multiple part numbers: APT30GS60BRDLG, APT30GS60BRDL. Please refer to the document for exact specifications by model.
APT30GS60BRDLG Datasheet Preview Page 2 APT30GS60BRDLG Datasheet Preview Page 3

Datasheet Details

Part number:

APT30GS60BRDLG, APT30GS60BRDL

Manufacturer:

Microsemi ↗ Corporation

File Size:

230.31 KB

Description:

Resonant mode combi igbt.

Note:

This datasheet PDF includes multiple part numbers: APT30GS60BRDLG, APT30GS60BRDL.
Please refer to the document for exact specifications by model.

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APT30GS60BRDLG APT30GS60BRDL Resonant Mode Combi IGBT Microsemi Corporation

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