APT35GA90B Datasheet (Microsemi Corporation)

APT35GA90B, High Speed PT IGBT

APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.

Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes.

A reduced Eoff VCE(ON) tradeoff results in superior efﬁciency compared to other IGBT technologies.

Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive.

The intrinsic chip gate resistance and capacitance of the A

APT35GA90B Features

* Fast switching with low EMI

* Very Low Eoff for maximum efﬁciency

* Ultra low Cres for improved noise immunity

* Low conduction loss

* Low gate charge

* Increased intrinsic gate resistance for low EMI

* RoHS compliant TYPICAL APPLICATIONS