Description
APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.Low Eoff is achieved -2 47 through leadin.
Features
* Fast switching with low EMI
* Very Low Eoff for maximum efficiency
* Ultra low Cres for improved noise immunity
* Low conduction loss
* Low gate charge
* Increased intrinsic gate resistance for low EMI
Applications
* ZVS phase shifted and other full bridge
* Half bridge
* High power PFC boost
* Welding
* UPS, solar, and other inverters
* High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE
Parameter
Collector Emitter Vo