APT35GA90B_MicrosemiCorporation.pdf
Datasheet Details
Part number:
APT35GA90S, APT35GA90B
Manufacturer:
Microsemi ↗ Corporation
File Size:
245.38 KB
Description:
High speed pt igbt.
Note:
This datasheet PDF includes multiple part numbers: APT35GA90S, APT35GA90B.
Please refer to the document for exact specifications by model.
APT35GA90S, APT35GA90B, High Speed PT IGBT
APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.
Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes.
A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies.
Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive.
The intrinsic chip gate resistance and capacitance of the A
APT35GA90S Features
* Fast switching with low EMI
* Very Low Eoff for maximum efficiency
* Ultra low Cres for improved noise immunity
* Low conduction loss
* Low gate charge
* Increased intrinsic gate resistance for low EMI
* RoHS compliant TYPICAL APPLICATIONS
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