APT50GT120B2RDL Resonant Mode IGBT

Microsemi Corporation

Description

TYPICAL PERFORMANCE CURVES APT50GT120B2RDL(G) 1200V www.DataSheet4U.com APT50GT120B2RDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish.R.

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Datasheet Specifications

Part number: APT50GT120B2RDL
Manufacturer: Microsemi ↗ Corporation
File Size: 239.48 KB
Datasheet: APT50GT120B2RDL_MicrosemiCorporation.pdf
Description: Resonant Mode IGBT

Features

* Low Conduction Loss
* Low Gate Charge
* Ultrafast Tail Current shutoff
* Low forward Diode Voltage (VF)
* Ultrasoft Recovery Diode
* SSOA Rated

Applications

* Induction Heating Welding Medical High Power Telecom Resonant Mode Phase Shifted Bridge C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 8 All Ratings: TC = 25°C unless otherwise speciﬁed.

APT50GT120B2RDL Distributors

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APT50GT120B2RDL Resonant Mode IGBT Microsemi Corporation

Microsemi Corporation APT50GT120B2RDL-like datasheet