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APTGT30H170T3G - IGBT Power Module

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Microsemi Corporation

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APTGT30H170T3G IGBT Power Module by Microsemi Corporation - Datasheet Preview — Datasheet preview – APTGT30H170T3G

Datasheet Details

Part number	APTGT30H170T3G
Manufacturer	Microsemi Corporation
File Size	295.39 KB
Description	IGBT Power Module
Datasheet	APTGT30H170T3G Datasheet
Additional preview pages of the APTGT30H170T3G datasheet.

Product details

Features

Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated.
Kelvin emitter for easy drive.
Low stray inductance.
High level of integration.
Internal thermistor for temperature monitoring Benefits.
Outstanding performance at high frequency operation.
Direct mounting t.

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Published: May 26, 2009 |