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APTGT35H120T3G - IGBT Power Module

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Microsemi Corporation

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APTGT35H120T3G IGBT Power Module by Microsemi Corporation - Datasheet Preview — Datasheet preview – APTGT35H120T3G

Datasheet Details

Part number	APTGT35H120T3G
Manufacturer	Microsemi Corporation
File Size	293.63 KB
Description	IGBT Power Module
Datasheet	APTGT35H120T3G Datasheet
Additional preview pages of the APTGT35H120T3G datasheet.

Product details

Features

Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated.
Kelvin emitter for easy drive.
Low stray inductance.
High level of integration.
Internal thermistor for temperature monitoring Benefits.
Outstanding performance at high frequency operation.
Direct mount.

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Published: May 26, 2009 |