PPNGZ52F120A

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Microsemi Corporation

PPNGZ52F120A Features

* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120

PPNGZ52F120A General Description

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX. 1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 to +150 50 100 0.42 UNIT Volts Volts Volts Volts A.

PPNGZ52F120A Datasheet (102.84 KB)