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PPNGZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Description

PPC INC.7516 Central Industrial Drive Riviera Beach, FL 33404 PH: 561-842-0305 Fax: 561-845-7813 PPNGZ52F120A PPNHZ52F120A .
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc).

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Features

* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120

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PPNGZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Microsemi Corporation
Microsemi Corporation PPNGZ52F120A-like datasheet
PPNHZ52F120A