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2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N2857 Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.
Silicon NPN transistor, designed for UHF equipment.

2N2857 Applications

* include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 40 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device D

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MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi
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