APT150GN60B2 Datasheet - Microsemi

APT150GN60B2 IGBT

TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefﬁcient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charg.

APT150GN60B2_Microsemi.pdf