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APT15GN120BDQ1 High Speed PT IGBT

APT15GN120BDQ1 Description

TYPICAL PERFORMANCE CURVES APT15GN120BDQ1 APT15GN120BDQ1(G) APT15GN120BD_SDQ1(G) APT15GN120SDQ1 APT15GN120SDQ1(G) www.DataSheet4U.com 1200V *G.

APT15GN120BDQ1 Applications

* that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 47 D3PAK (S) C G E
* 1200V Field Stop

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High Speed IGBT Microsemi
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