APT50GS60BRDQ2 Datasheet (Microsemi)

APT50GS60BRDQ2, High Speed NPT IGBT

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signiﬁcantly lower turn-on energy Eoff.

The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost.

An extremely tight parameter distributi

APT50GS60BRDQ2 Features

* Typical Applications APT50GS60BRDQ2(G) APT50GS60SRDQ2(G)

* Fast Switching with low EMI

* Very Low EOFF for Maximum Efﬁciency

* Short circuit rated

* Low Gate Charge

* ZVS Phase Shifted and other Full Bridge

* Half Bridge

* High Power PFC Bo