APT50GS60SRDQ2, APT50GS60BRDQ2 Datasheet - Microsemi

APT50GS60SRDQ2 High Speed NPT IGBT

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signiﬁcantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distributi.

APT50GS60SRDQ2 Features

* Typical Applications APT50GS60BRDQ2(G) APT50GS60SRDQ2(G)

* Fast Switching with low EMI

* Very Low EOFF for Maximum Efﬁciency

* Short circuit rated

* Low Gate Charge

* ZVS Phase Shifted and other Full Bridge

* Half Bridge

* High Power PFC Bo

APT50GS60BRDQ2-Microsemi.pdf

APT50GS60SRDQ2 Datasheet Preview — This datasheet PDF includes multiple part numbers: APT50GS60SRDQ2, APT50GS60BRDQ2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

APT50GS60SRDQ2, APT50GS60BRDQ2

Manufacturer:

Microsemi ↗

File Size:

327.87 KB

Description:

High speed npt igbt.

Note:

This datasheet PDF includes multiple part numbers: APT50GS60SRDQ2, APT50GS60BRDQ2.
Please refer to the document for exact specifications by model.

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APT50GS60SRDQ2 APT50GS60BRDQ2 High Speed NPT IGBT Microsemi

APT50GS60SRDQ2 Distributor