Datasheet4U Logo Datasheet4U.com

APT68GA60B Datasheet - Microsemi

APT68GA60B High Speed PT IGBT

APT68GA60B APT68GA60S 600V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the TO-247.

APT68GA60B Features

* Fast switching with low EMI

* Very Low Eoff for maximum efficiency

* Ultra low Cres for improved noise immunity

* Low conduction loss

* Low gate charge

* Increased intrinsic gate resistance for low EMI

* RoHS compliant TYPICAL APPLICATIONS

APT68GA60B Datasheet (183.79 KB)

Preview of APT68GA60B PDF

Datasheet Details

Part number:

APT68GA60B

Manufacturer:

Microsemi ↗

File Size:

183.79 KB

Description:

High speed pt igbt.

📁 Related Datasheet

APT68GA60S High Speed PT IGBT (Microsemi)

APT6010B2FLL Power MOSFET (Microsemi)

APT6010B2FLL N-Channel MOSFET (INCHANGE)

APT6010B2LL Power MOSFET (Advanced Power Technology)

APT6010B2LL N-Channel MOSFET (INCHANGE)

APT6010JFLL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. (Advanced Power Technology)

APT6010JLL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. (Advanced Power Technology)

APT6010LFLL N-Channel MOSFET (INCHANGE)

APT6010LFLL Power MOSFET (Microsemi)

APT6010LFLLG Power MOSFET (Microsemi)

TAGS

APT68GA60B High Speed IGBT Microsemi

Image Gallery

APT68GA60B Datasheet Preview Page 2 APT68GA60B Datasheet Preview Page 3

APT68GA60B Distributor