* Fast switching with low EMI
* Very Low Eoff for maximum efficiency
* Ultra low Cres for improved noise immunity
* Low conduction loss
* Low gate charge
* Increased intrinsic gate resistance for low EMI
* RoHS compliant TYPICAL APPLICATIONS
APT68GA60B Datasheet (183.79 KB)
APT68GA60B
183.79 KB
High speed pt igbt.
APT68GA60B APT68GA60S
600V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading tech.
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