Datasheet Specifications
- Part number
- APTGT150DH120G
- Manufacturer
- Microsemi ↗
- File Size
- 246.56 KB
- Datasheet
- APTGT150DH120G-Microsemi.pdf
- Description
- IGBT
Description
APTGT150DH120G Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 CR3 VCES = 1200V IC = 150A @ Tc = 80°C Application
Features
* Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA ratedAPTGT150DH120G Distributors
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