APTGT150DH170G IGBT

Microsemi

Description

APTGT150DH170G Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module VBUS Q1 G1 CR3 VCES = 1700V IC = 150A @ Tc = 80°C Application * W.

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Datasheet Specifications

Part number: APTGT150DH170G
Manufacturer: Microsemi ↗
File Size: 247.25 KB
Datasheet: APTGT150DH170G-Microsemi.pdf
Description: IGBT

Features

* Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
* Kelvin emitter for easy drive
* Very low str

APTGT150DH170G Distributors

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APTGT150DH170G IGBT Microsemi

Microsemi APTGT150DH170G-like datasheet