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GC4511 Datasheet - Microsemi

GC4511 High Voltage NIP Diodes

The GC4500 series are high voltage, high power (anode base) NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. These devices can withstand storage tem.

GC4511 Features

* Available as packaged devices or as chips for hybrid applications

* High power handling

* Suitable for applications to 18Ghz

* Low Loss

* Low Distortion

* RoHS Compliant1 1 Products are supplied with a Gold finish and are suitable for RoHS complaint assembly. Consult factor

GC4511 Datasheet (162.31 KB)