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GC4531 - High Voltage NIP Diodes

Download the GC4531 datasheet PDF. This datasheet also covers the GC4510 variant, as both devices belong to the same high voltage nip diodes family and are provided as variant models within a single manufacturer datasheet.

Description

The GC4500 series are high voltage, high power (anode base) NIP diodes.

These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.

Features

  • Available as packaged devices or as chips for hybrid.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GC4510-Microsemi.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Microsemi (Microchip)

Part Number Description
GC4530 High Voltage NIP Diodes
GC4532 High Voltage NIP Diodes
GC4533 High Voltage NIP Diodes
GC4510 High Voltage NIP Diodes
GC4511 High Voltage NIP Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.MICROSEMI.com TM ® DESCRIPTION The GC4500 series are high voltage, high power (anode base) NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55° to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. The NIP diode is used when negative bias current is available for forward conduction and will operate typically with -50 mA bias. Breakdown voltages are available up to 500 volts. (Higher voltages available on request. Consult factory for details.
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