GC4921-112 Datasheet | Microsemi

DESCRIPTION Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra-fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters along with ceramic glass, which provides mechanical strength to the diode. These devices are designed with a narrow base width, a high quality intrinsic ‘I’ layer that provides low loss, high isolation and ultra-high speed switching characteristics. This series of diodes meets Ro HS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. APPLICATIONS These high speed beam lead PIN diodes are designed for stripline and microstrip circuits and are primarily used in shunt/series and conventional series multi-throw configurations as switching, attenuating and phase shifting elements with frequencies extending up to Ka band. KEY FEATURES - Dual Series PIN Diodes - Wide Bandwidth / High Switching Speed - Up to 3 d B Isolation improvement over conventional designs - 5 Gram Typical Pull Strength - Very Low RS/CJ (Loss/Isolation) - High Quality, High Resistivity Epitaxy - Stable Low Leakage Passivation with Rugged Glass Body - Ro HS pliant 1 1- These devices are supplied with gold terminations. Consult factory for details. APPLICATION/BENEFITS - High Speed Switching - Broadband Performance - Suitable for Applications through 40GHz For the most current data, consult MICROSEMI’s website: .MICROSEMI. Specifications are subject to change, consult the RFIS factory at (978) 442-5600 for the latest information. GC4921-112 & GC4922-112 CONTROL DEVICES - ® DUAL SERIES BEAMLEAD DIODE Ro HS pliant ABSOLUTE MAXIMUM RATINGS @ 25C Rating Maximum Leakage Current @80% of minimum Rated VB Operating Temperature Storage Temperature CW RF Operating Power Power Dissipation (derate...