GC4921-112
Overview
Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra-fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters along with ceramic glass, which provides mechanical strength to the diode.
- Dual Series PIN Diodes
- Wide Bandwidth / High Switching Speed
- Up to 3 dB Isolation improvement over conventional designs
- 5 Gram Typical Pull Strength
- Very Low RS/CJ (Loss/Isolation)
- High Quality, High Resistivity Epitaxy
- Stable Low Leakage Passivation with Rugged Glass Body
- RoHS Compliant 1 1- These devices are supplied with gold terminations. Consult factory for details.
