Description
Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra-fast switching characteristics.
Features
- Dual Series PIN Diodes.
- Wide Bandwidth / High Switching
Speed.
- Up to 3 dB Isolation improvement
over conventional designs.
- 5 Gram Typical Pull Strength.
- Very Low RS/CJ (Loss/Isolation).
- High Quality, High Resistivity Epitaxy.
- Stable Low Leakage Passivation
with Rugged Glass Body.
- RoHS Compliant 1
1- These devices are supplied with gold terminations. Consult factory for details.
GC4921-112 Datasheet
