JANS1N4106UR-1 - SILICON 400mA LOW NOISE ZENER DIODES

Microsemi

Datasheet Details

Part number	JANS1N4106UR-1
Manufacturer	Microsemi
File Size	165.05 KB
Description	SILICON 400mA LOW NOISE ZENER DIODES
Datasheet	JANS1N4106UR-1 Datasheet
Additional preview pages of the JANS1N4106UR-1 datasheet.

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Full PDF Text Transcription

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• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 500mW @ TEC = +125°C Power Derating: 10mW/ °C above TEC = +125°C Forward Derating @ 200 mA: 1.1 Volts maximum ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.

Published: Feb 21, 2013 |