Description
and applications
Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency.Electrical characteristics(1)
MBR2040CT MBR2045CT MBR2050CT MBR2060CT MBR2080CT MBR2090CT MBR20100CT MBR20150CT MBR20200CT
Symbol
Parameter
Unit
VRRM
Max Peak Repetitive Reverse Voltage 40 45
VR(RMS)
Max RMS Reverse Vol
Features
- Plastic package with UL 94V-0 flammability classification.
- Flame retardant epoxy molding component.
- Guardring for overvoltage protection.
- Low power loss, high efficiency.
- RoHS compliant (2002/95/EC)
2
1 23 1 2 3
TO-220AB.