MG1001 Datasheet - Microsemi

MG1001, GUNN Diodes

® TM Discrete Frequency: Cathode Heatsink GUNN Diodes Cathode Heat Sink MG1001 * MG1060 .
Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD).

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MG1001-Microsemi.pdf

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Datasheet Details

Part number:

MG1001

Manufacturer:

Microsemi ↗

File Size:

205.73 KB

Description:

GUNN Diodes

Features

* CW Designs to 500 mW
* Pulsed Designs to 10 W
* Frequency Coverage Specified from 5.9
* 95 GHz
* Low Phase Noise

Applications

* Motion Detectors
* Transmitters and Receivers
* Beacons
* Automotive Collision Avoidance Radars
* Radars
* Radiometers

MG1001 Distributors

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MG1001 GUNN Diodes Microsemi

Microsemi MG1001-like datasheet