MG1001 GUNN Diodes

Microsemi

Description

® TM Discrete Frequency: Cathode Heatsink GUNN Diodes Cathode Heat Sink MG1001 * MG1060 .
Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD).

📥 Download Datasheet

MG1001 Datasheet Preview — Preview of MG1001 PDF

Datasheet Specifications

Part number: MG1001
Manufacturer: Microsemi ↗
File Size: 205.73 KB
Datasheet: MG1001-Microsemi.pdf
Description: GUNN Diodes

Features

* CW Designs to 500 mW
* Pulsed Designs to 10 W
* Frequency Coverage Specified from 5.9
* 95 GHz
* Low Phase Noise

Applications

* Motion Detectors
* Transmitters and Receivers
* Beacons
* Automotive Collision Avoidance Radars
* Radars
* Radiometers

MG1001 Distributors

📁 Related Datasheet

MG100 MG100G1AL3 MG100G1FL1 MG100G2CH1 MG100G2CL1 MG100G2DL1

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MG1001 GUNN Diodes Microsemi

Microsemi MG1001-like datasheet