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MG1004 - GUNN Diodes

Download the MG1004 datasheet PDF. This datasheet also covers the MG1001 variant, as both devices belong to the same gunn diodes family and are provided as variant models within a single manufacturer datasheet.

Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process.

The layers are processed using proprietary techniques resulting in low phase and 1/f noise.

Features

  • CW Designs to 500 mW.
  • Pulsed Designs to 10 W.
  • Frequency Coverage Specified from 5.9.
  • 95 GHz.
  • Low Phase Noise.
  • High Reliability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MG1001-Microsemi.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Microsemi (Microchip)

Part Number Description
MG1001 GUNN Diodes
MG1002 GUNN Diodes
MG1003 GUNN Diodes
MG1005 GUNN Diodes
MG1006 GUNN Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
® TM Discrete Frequency: Cathode Heatsink GUNN Diodes Cathode Heat Sink MG1001 – MG1060 Features ● CW Designs to 500 mW ● Pulsed Designs to 10 W ● Frequency Coverage Specified from 5.9–95 GHz ● Low Phase Noise ● High Reliability Applications ● Motion Detectors ● Transmitters and Receivers ● Beacons ● Automotive Collision Avoidance Radars ● Radars ● Radiometers ● Instrumentation Description Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9– 95 GHz.
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