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MSC2X51SDA170J Dual Silicon Carbide Schottky Barrier Diodes

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Description

MSC2X51/50SDA170J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product l.

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Features

* The following are key features of the MSC2X51SDA170J and MSC2X50SDA170J devices:
* No reverse recovery
* Low forward voltage
* Low leakage current
* Avalanche-energy rated
* RoHS compliant
* Isolated voltage to 2500 V Benefits The following are benefit

Applications

* MSC2X51/50SDA170J are dual 1700 V, 50 A SiC SBD devices in a SOT-227 package. Figure 1
* Parallel MSC2X51SDA170J Figure 2

MSC2X51SDA170J Distributors

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Dual Silicon Carbide Schottky Barrier Diodes Microsemi
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