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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSC2295–BT1/D
NPN RF Amplifier Transistors Surface Mount
COLLECTOR 3
MSC2295-BT1 MSC2295-CT1
Motorola Preferred Devices
3
2 BASE
1 EMITTER
2 1
MAXIMUM RATINGS (TA = 25°C)
Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 20 5.0 30 Unit Vdc Vdc Vdc mAdc CASE 318D–03, STYLE 1 SC–59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150
www.DataSheet4U.com
Unit mW °C °C
– 55 ~ +150
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector–Base Cutoff Current (VCB = 10 Vdc, IE = 0) DC Current Gain(1) (VCB = 10 Vdc, IC = –1.
MSC2295-BT1 Datasheet
