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SD1070 RF & MICROWAVE TRANSISTORS

SD1070 Description

SD1070 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW .
KEY FEATURES W W W .

SD1070 Features

* W W W . Microsemi . COM This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base

SD1070 Applications

* BENEFITS APPLICATIONS/BENEFITS ! VHF - UHF Applications ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol VCBO VCES VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value

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MICROWAVE TRANSISTORS Microsemi Corporation
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