Part number:
1N5811C
Manufacturer:
Micross
File Size:
148.68 KB
Description:
Superfast rectifier diode.
* VR = 150V IR = 5.0µA trr = 30ns VF = 0.875V at IF = 4.0A 1N5811C 150V Axial Leaded Superfast Rectifier Diode Quick Reference Data Low reverse leakage current Very low reverse recovery time Hermetically sealed Good thermal shock resistance Low forward voltage drop Absolute Maximum Ratings
1N5811C
Micross
148.68 KB
Superfast rectifier diode.
📁 Related Datasheet
1N5811 - RECTIFIERS
(Solid State)
.
1N5811 - VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
(Microsemi)
1N5807, 1N5809 and 1N5811
Available on mercial
versions
VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-1.
1N5811 - SUPERFAST RECTIFIER DIOSE
(Semtech)
RECTIFIER, up to 150V, 6A, 30ns
1N5807 1N5809 1N5811
TEL:805-498-2111 FAX:805-498- 3804 WEB:http://.semtech.
MECHANICAL
G112
Dimensions
DI.
1N5811 - Rectifier Diode
(MA-COM)
1N5807(US), 1N5809(US), 1N5811(US)
Rectifier Diode Series Ultrafast Recovery
Features
Popular JEDEC Registered Series Voidless Hermetically Seale.
1N5811 - ULTRAFAST RECOVERY RECTIFIER DIODES
(EIC)
.eicsemi.
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
1N5807 - 1N5811
PRV : 50 - 150 Volts Io : 6.0 Amperes
ULTRAFAST RECOVERY RECTIFIER.
1N5811 - HIGH EFFICIENCY RECTIFIERS
(Digitron Semiconductors)
1N5807-1N5811
High-reliability discrete products and engineering services since 1977
HIGH EFFICIENCY RECTIFIERS
FEATURES Available as “HR” (high .
1N5811 - SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER
(Gulf Semiconductor)
1N5811
SINTERED GLASS JUNCTION
FAST AVALANCHE RECTIFIER
VOLTAGE：150V
CURRENT: 3.0A
FEATURE
G-4
Glass passivated Hermetically sealed package Low.
1N5811-M - DIODE
(DSI)
Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren.
