| Part number | 1N5811-M |
|---|---|
| Datasheet | 1N5811-M-DSI.pdf |
| File Size | 51.44 KB |
| Manufacturer | DSI |
| Description | DIODE |
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Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Junction Temperature (TJ) 150.0 V 150.0 V empty A 6.0 A empty A 125.0 A empty W 30.0 °C/W 175.0 °C NO.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1N5811 | Superfast Rectifier Diodes | Micross |
| Solid State | 1N5811 | RECTIFIERS | Solid State |
 |
1N5811 | VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS | Microsemi |
 |
1N5811 | SUPERFAST RECTIFIER DIOSE | Semtech |
 |
1N5811 | Rectifier Diode | MA-COM |
| Part Number | Description |
|---|---|
| 1N5810 | DIODE |
| 1N5810-M | DIODE |
| 1N5804 | DIODE |
| 1N5807 | DIODE |
| 1N5824G | DIODE |
| 1N5825G | DIODE |
| 1N5416 | DIODE |
| 1N5419 | DIODE |
| 1N5461B | DIODE |
| 1N5550 | DIODE |
