* LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) | VGS1‐2 / T| = 5µV/°C TYP. IG = 150fA TYP. Vp = 2V TYP. 2N5906 Benefits:
* Tight Tracking Good matching Ultra Low Leakage Low Drift Maximum Temperatures Storage Tempe
2N5906
Micross
304.34 KB
N-channel jfet.
2N5906 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
The 2N5906 is a high-performance monolithic dual JFET featuring tight matching and low drif.
📁 Related Datasheet
2N5900 GERMANIUM PNP POWER TRANSISTORS (ETC)
2N5901 GERMANIUM PNP POWER TRANSISTORS (ETC)
2N5902 MONOLITHIC DUAL N-CHANNEL JFET (Intersil Corporation)
2N5902 dual n-channel JFET (Siliconix)
2N5902 N-Channel Monolithic Dual JFET (National Semiconductor)
2N5903 monolithic dual n-channel JFET (Intersil Corporation)
2N5903 dual n-channel JFET (Siliconix)
2N5903 N-Channel Monolithic Dual JFET (National Semiconductor)
2N5904 monolithic dual n-channel JFET (Intersil Corporation)
2N5904 dual n-channel JFET (Siliconix)
