MYXB21200-20GAB Datasheet - Micross

SiC Power BJT Double

* PBreondeufitcst Overview

* Two devices in one hermetic package. ar y

* High voltage 1200V isolation in a small package outline

* High current 20A

* High temperature 210OC Appliicnations

* RoHS compliant

* HMP solder tinned leads available

MYXB21200-20GAB

Micross

300.47 KB

Sic power bjt double.

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MYXB21200-20GAB SiC Power BJT Double Micross

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