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MYXD30650-10CEN - SiC Schottky 3 Phase Diode Bridge

Features

  • ary.
  • High voltage 650V isolation.
  • 6 off high current 10A diodes.
  • High temperature 210°C in.
  • BeO free and RoHS compliant.
  • HMP solder tinned leads available.
  • Electrically isolated flange relim.
  • Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage and superior high temperature performance.
  • No reverse recovery time P.
  • Screening options available Benefits.
  • Essentially no switching losses.

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Datasheet Details

Part number MYXD30650-10CEN
Manufacturer Micross
File Size 270.29 KB
Description SiC Schottky 3 Phase Diode Bridge
Datasheet download datasheet MYXD30650-10CEN Datasheet
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SiC Schottky 3 Phase Diode Bridge 650 Volt 10 Amp Hermetic MYXD30650-10CEN Product OverviewFeatures ary• High voltage 650V isolation • 6 off high current 10A diodes • High temperature 210°C in• BeO free and RoHS compliant • HMP solder tinned leads available • Electrically isolated flange relim• Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage and superior high temperature performance • No reverse recovery time P• Screening options available Benefits • Essentially no switching losses • Higher efficiency • Reduction of heat sink requirements Applications • Harsh environment rectification • Harsh environment regulators ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Other packaging options availab
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