• Part: MYXB21200-20GAB
  • Description: SiC Power BJT Double
  • Manufacturer: Micross
  • Size: 300.47 KB
Download MYXB21200-20GAB Datasheet PDF
Micross
MYXB21200-20GAB
MYXB21200-20GAB is SiC Power BJT Double manufactured by Micross.
Features PBreondeufitcst Overview - Two devices in one hermetic package. ar y- High voltage 1200V isolation in a small package outline - High current 20A - High temperature 210OC Appliicnations- Ro HS pliant - HMP solder tinned leads available - Electrically isolated flange / case relim- Silicon Carbide (Si C) device, gives a superior high temperature performance - Fast temperature independent switching - Screening options available Pºº mercial high temperature - High speed switching with low capacitance - High blocking voltage with low R(on) - Reduction of heat sink requirements - Harsh environment motor drive - Harsh environment inverter - Induction heater - DC-DC converters - Aerospace power electronics ºº In accordance with MIL-PRF-19500 ºº Other options available on request - Excellent capability to withstand short circuit Absolute Maximum Ratings-...