TAV-541+ - E-PHEMT Transistor
DRAIN GATE GATE SOURCE SOURCE SOURCE Function Source Gate Drain DRAIN Pad Number 2&4 3 1 Description Source terminal, normally connected to ground Gate used for RF input Drain used for RF output www.minicircuits.com P.O.
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ULTRA LOW NOISE, HIGH CURRENT E-PHEMT Transistor TAV-541+ THE BIG DEAL y Low Noise Figure, 0.5 dB y Gain, 17 dB at 2 GHz y High Output IP3, +33 dBm y Output Power at 1dB comp., +19 dBm y High Current, 60mA y Wide bandwidth y External biasing and matching required APPLICATIONS y Cellular y ISM y GSM y WCDMA y WiMax y WLAN y UNII and HIPERLAN Generic photo used for illustration purposes only CASE STYLE: FG873 +RoHS Compliant The +Suffix identifies RoHS Compliance.
See our web site for RoHS Comp
TAV-541+ Features
* Feature Wideband, 0.045 to 6 GHz Use in multiple applications: UHF, VHF, communication infrastructure Advantages High Gain, Low noise figure High Gain limits the effect of noise figure due to previous stages Small size, 1.18 x 1.42 x 0.85 mm, MCLP Small foot print saves space in dense layouts w
