BCR8CS
Mitsubishi Electric Semiconductor
86.03 KB
Triac.
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8CS
OUTLINE DRAWING
Dimensions in mm
4
1.
📁 Related Datasheet
BCR8CM - TRIAC
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8CM
OUTLINE DRAWING
10.5 MAX
Dimensions in.
BCR8CM - TRIAC
(Powerex Power Semiconductors)
BCR8CM
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
Triac
8 Amperes/400-600 Volts
OUTLINE DRAWING
C
D
E.
BCR8CM-12LA - Triac
(Renesas Technology)
BCR8CM-12LA
Triac
Medium Power Use
REJ03G0295-0300 Rev.3.00 Nov 30, 2007
Features
• IT (RMS) : 8 A • VDRM : 600 V .. • IFGTI, IRGTI,.
BCR8CM-12LB - Triac
(Renesas Technology)
BCR8CM-12LB
Triac
Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
REJ03G0454-0300 Rev.3.00 Nov 30, 2007
Features
T (R.
BCR8CS-12LA - Triac
(Renesas Technology)
BCR8CS-12LA
Triac
Medium Power Use
REJ03G0338-0300 Rev.3.00 Nov 30, 2007
Features
• IT (RMS) : 8 A • VDRM : 600 V .. • IFGTI, IRGTI,.
BCR8CS-12LB - Triac
(Renesas Technology)
BCR8CS-12LB
Triac
Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
REJ03G0468-0300 Rev.3.00 Nov 30, 2007
Features
T (R.
BCR8FM-14LB - Thyristor
(INCHANGE)
isc Thyristors
BCR8FM-14LB
DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations.
BCR8FM-14LB - Triac
(Renesas)
BCR8FM-14LB
700V - 8A - Triac
Medium Power Use
Features
• IT (RMS) : 8 A • VDRM : 800 V (Tj=125C) • Tj: 150 °C • IFGTI, IRGTI, IRGT III:30 mA(20mA) N.
