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CM75DU-12H - IGBT Module

Datasheet Summary

Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Features

  • ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

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Datasheet preview – CM75DU-12H

Datasheet Details

Part number CM75DU-12H
Manufacturer Mitsubishi Electric Semiconductor
File Size 52.23 KB
Description IGBT Module
Datasheet download datasheet CM75DU-12H Datasheet
Additional preview pages of the CM75DU-12H datasheet.

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Full PDF Text Transcription

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MITSUBISHI IGBT MODULES CM75DU-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G1 E1 G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V L M N TAB#110 t=0.5 P S R T E2 G2 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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