FU-427SLD-F1 Datasheet - Mitsubishi Electric Semiconductor

FU-427SLD-F1 1.3 um LD MODULE

FU-427SLD-F1 Features

* High-speed response Emission wavelength is in 1.3 mm band Low threshold current (7mA typ.) With photodiode for optical output monitor MQW

* active layer FSBH

* structure fabricated by all MOCVD process

* Multiple quantum well

* Facet selective-growth buried heterostructure APPL

Datasheet Details

FU-427SLD-F1

Mitsubishi Electric Semiconductor

45.38 KB

1.3 um ld module.

FU-427SLD-F1 Distributor

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