RD15HVF1 - Silicon MOSFET Power Transistor
RD15HVF1 Features
* High power and High Gain: Pout>15 W, Gp>14 dB @Vds=12.5 V,f=175 MHz High Efficiency: 60 % (typ) on VHF Band Integrated gate protection diode APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 12.3MIN 1.2+/-0.4 0.8+0.10/-0.15 123 2.5 2.5 0.5+0.10/-0.15 3.1+/
