RD15HVF1 Datasheet, transistor equivalent, Mitsubishi Electric Semiconductor

RD15HVF1 Features

• Transistor High power and High Gain: Pout>15 W, Gp>14 dB @Vds=12.5 V,f=175 MHz High Efficiency: 60 % (typ) on VHF Band Integrated gate protection diode APPLICATION For output stage of high power a

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Part number:

RD15HVF1

Manufacturer:

Mitsubishi Electric Semiconductor

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432.02kb

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📄 Datasheet

Description:

Silicon mosfet power transistor. RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions. OUTLINE DRAWING 9.1+/-

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RD15HVF1

Mitsubishi Electric Semiconductor

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