* 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch
RD100HHF1 Datasheet (239.92 KB)
RD100HHF1
Mitsubishi Electric Semiconductor
239.92 KB
Mos fet.
www.DataSheet.co.kr
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0..
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