RD100HHF1 Datasheet, Fet, Mitsubishi Electric Semiconductor

RD100HHF1 Features

• Fet 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN

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Part number:

RD100HHF1

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Mitsubishi Electric Semiconductor

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📄 Datasheet

Description:

Mos fet. RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/

RD100HHF1 Application

• Applications OUTLINE DRAWING 4-C2 24.0+/-0.6
• High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
• High Efficiency

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RD100HHF1

Mitsubishi Electric Semiconductor

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