Datasheet Details
| Part number | RD100HHF1 |
|---|---|
| Manufacturer | Mitsubishi Electric Semiconductor |
| File Size | 239.92 KB |
| Description | MOS FET |
| Datasheet |
|
| Part number | RD100HHF1 |
|---|---|
| Manufacturer | Mitsubishi Electric Semiconductor |
| File Size | 239.92 KB |
| Description | MOS FET |
| Datasheet |
|
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 2 10.0+/-0.3
📁 RD100HHF1 Similar Datasheet