RD100HHF1 - MOS FET

Mitsubishi Electric Semiconductor

RD100HHF1 Datasheet Preview — Preview of RD100HHF1 PDF

Datasheet Details

Part number	RD100HHF1
Manufacturer	Mitsubishi Electric Semiconductor
File Size	239.92 KB
Description	MOS FET
Datasheet	RD100HHF1_MitsubishiElectricSemiconductor.pdf

RD100HHF1 Product details

Description

RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 2 10.0+/-0.3

Features

9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7.

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Published: Jan 9, 2012 |