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RD100HHF1 Datasheet - Mitsubishi Electric Semiconductor

RD100HHF1_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

RD100HHF1

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

239.92 KB

Description:

Mos fet.

RD100HHF1, MOS FET

RD100HHF1 Features

* 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch

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RD100HHF1 MOS FET Mitsubishi Electric Semiconductor
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