RD100HHF1C Datasheet, Fet, Mitsubishi

✔ RD100HHF1C Features

High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 17.0± 0.5 4-C2 1 2 9.6± 0.3 10.0± 0.3 3 5.0±0.3 18.5±0.3 2-R1.6

✔ RD100HHF1C Application

OUTLINE DRAWING 7.0±0.5 25.0±0.3 11.0±0.30 FEATURES High power and High Gain: Pout>100W, Gp>11.5dB @VDD

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RD100HHF1C

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Mitsubishi

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📄 Datasheet

Description:

Silicon rf power mos fet. RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 7.0±0.5 2

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RD100HHF1C Silicon Power MOS FET Mitsubishi