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RD100HHF1C - Silicon RF Power MOS FET

Mitsubishi

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Datasheet Details

Part number	RD100HHF1C
Manufacturer	Mitsubishi
File Size	466.83 KB
Description	Silicon RF Power MOS FET
Datasheet	RD100HHF1C-Mitsubishi.pdf

RD100HHF1C Product details

Description

RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

Features

High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz High Efficiency: 60%typ. on HF Band 17.0± 0.5 4-C2 1 2 9.6± 0.3 10.0± 0.3 3 5.0±0.3 18.5±0.3 2-R1.6 ± 0.15 3.3± 0.2.

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Published: Apr 16, 2019 |