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RD20HMF1

Silicon MOSFET Power Transistor

RD20HMF1 Features

* 1 6.6+/-0.3 APPLICATION For output stage of high power amplifiers in 900MHz band Mobile radio sets. 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. www.DataSheet.net/ RoHS compliance is indicate by the letter “G” after the Lot

RD20HMF1 General Description

RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications. 7.2+/-0.5 OUTLINE DRAWING 22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1 High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. 2.8+/-0.3 0.10 2 3 R1.6 14.0+/-0.4 FEA.

RD20HMF1 Datasheet (551.30 KB)

Preview of RD20HMF1 PDF

Datasheet Details

Part number:

RD20HMF1

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

551.30 KB

Description:

Silicon mosfet power transistor.

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TAGS

RD20HMF1 Silicon MOSFET Power Transistor Mitsubishi Electric Semiconductor

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