RD20HMF1 Datasheet, Transistor, Mitsubishi Electric Semiconductor

RD20HMF1 Features

• Transistor 1 6.6+/-0.3 APPLICATION For output stage of high power amplifiers in 900MHz band Mobile radio sets. 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD20HMF1

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Part number:

RD20HMF1

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Mitsubishi Electric Semiconductor

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📄 Datasheet

Description:

Silicon mosfet power transistor. RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications. 7.2+/-0.5 OUTLINE DRA

RD20HMF1 Application

• Applications 7.2+/-0.5 OUTLINE DRAWING 22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1 High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Effici

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RD20HMF1

Mitsubishi Electric Semiconductor

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