M63827DP Datasheet (Mitsubishi Electric) - (M63827xP) 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY

M63827DP, (M63827xP) 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY

M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

PIN CONFIGURATION        INPUT         I

M63827DP Features

* Two package configurations (WP/DP) High breakdown voltage (BVCEO ≥ 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with TTL, PMOS IC output Wide operating temperature range (Ta =

* 40 to +85° C) 16P4X-A(WP) Package type 16P2X-B(DP) CIRCUIT DIAGRAM COM OUTP