* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 440-520MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V www.DataSheet4U.com
* Module Size: 66 x 21 x 9.88 mm
RA45H4452M Datasheet (164.85 KB)
RA45H4452M
Mitsubishi Electric
164.85 KB
Rohs compliance.
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA45H4452M
BLOCK DIAGRAM
RoHS Compliance , 440-520MHz 45W 12.
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