RA45H7687M1

RoHS Compliance

Mitsubishi Electric

RA45H7687M1 Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG=0V) www.DataSheet4U.com 1 4 5 1 2 3 4 5 RF Input added Gate Voltage 1(Pin&VGG1) Gate Voltage 2(VGG2), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)

* Pout>45W, ηT>33% @VDD=12.8V, VGG1=3

RA45H7687M1 General Description

The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small .

RA45H7687M1 Datasheet (194.53 KB)

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Part number:

RA45H7687M1

Manufacturer:

Mitsubishi Electric

File Size:

194.53 KB

Description:

Rohs compliance.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 BLOCK DIAGRAM 2 3 RoHS Compliance, 764-870MHz 45.

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RA45H7687M1 RoHS Compliance Mitsubishi Electric

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RA45H7687M1 Features

RA45H7687M1 General Description

Datasheet Details

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