RA45H7687M1 Datasheet (Mitsubishi Electric)

RA45H7687M1, RoHS Compliance

The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small

RA45H7687M1 Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG=0V) www.DataSheet4U.com 1 4 5 1 2 3 4 5 RF Input added Gate Voltage 1(Pin&VGG1) Gate Voltage 2(VGG2), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)

* Pout>45W, ηT>33% @VDD=12.8V, VGG1=3