M54587FP Datasheet - Mitsubishi

M54587FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY

M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION NC IN1 IN2 IN3 IN4 I.

M54587FP Features

* q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (IC(max) = 500mA) q “L” active level input q With input diode q With clamping diodes q Wide operating temperature range (Ta =

* 20 to +75° C) IN6 IN7 IN8 GND 20P4(P) Package type 20P2N-A(FP) APPLICATION Interfaces between microc

M54587FP_MitsubishiElectricSemiconductor.pdf