M5M5256DRV-85VXL-I Datasheet (Mitsubishi) - 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

M5M5256DRV-85VXL-I, 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM.

Stand-by current is small eno

M5M5256DRV-85VXL-I Features

* 2V, Other inputs=0~Vcc (Note 7) 20 4 uA 0.05 (Note 8) Note7: ICC (PD) = 1uA in case of Ta = 25°C Note8: ICC (PD) = 0.2uA in case of Ta = 25°C (2) TIMING REQUIREMENTS (Ta = -40~85°C, Vcc=3.3±0.3V, unless otherwise noted ) Symbol tsu (PD) trec (PD) Parameter Power down set up time Power