M5M5256DRV-10VLL-I - 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology.
The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM.
Stand-by current is small eno
M5M5256DRV-10VLL-I Features
* CMOS STATIC RAM POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Vcc (PD) VI (/S) Icc (PD) (Ta = -40~85°C, Vcc=2.7~3.6V, unless otherwise noted) Parameter Power down supply voltage Chip select input /S Power down supply current Test conditions Min 2 2 -VLL -VXL Limits Typ Max
